Robert L. Boylestad和Louis Nashelsky都是在大学从事电路分析、电子电路基础等相关学科教学的资深教授，在电子电路学科领域出版了多部优秀教材，受到很高的评价。 Robert L. Boylestad和Louis Nashelsky都是在大学从事电路分析、电子电路基础等相关学科教学的资深教授，在电子电路学科领域出版了多部优秀教材，受到很高的评价。
目錄：
Chapter 1 Semiconductor Diodes
1.1 Introduction
1.2 Semiconductor Materials: Ge, Si, and GaAs
1.3 Covalent Bonding and Intrinsic Materials
1.4 Extrinsic Materials: n-Type and p-Type Materials
1.5 Semiconductor Diode
1.6 Ideal Versus Practical
1.7 Resistance Levels
1.8 Diode Equivalent Circuits
1.9 Transition and Diffusion Capacitance
1.10 Reverse Recovery Time
1.11 Diode Specification Sheets
1.12 Semiconductor Diode Notation
1.13 Zener Diodes
1.14 Light-Emitting Diodes
1.15 Summary
1.16 Computer Analysis
Problems
Chapter 2 Diode Applications
2.1 Introduction
2.2 Load-Line Analysis
2.3 Equivalent Model Analysis
2.4 ANDOR Gates
2.5 Sinusoidal Inputs; Half-Wave Rectification
2.6 Full-Wave Rectification
2.7 Clippers
2.8 Clampers
2.9 Zener Diodes
2.10 Summary
Problems
Chapter 3 Bipolar Junction Transistors
3.1 Introduction
3.2 Transistor Construction
3.3 Transistor Operation
3.4 Common-Base Configuration
3.5 Transistor Amplifying Action
3.6 Common-Emitter Configuration
3.7 Common-Collector Configuration
3.8 Limits of Operation
3.9 Transistor Specification Sheet
3.10 Transistor Casing and Terminal Identification
3.11 Summary
Problems
Chapter 4 DC Biasing — BJTs
4.1 Introduction
4.2 Operating Point
4.3 Fixed-Bias Circuit
4.4 Emitter Bias
4.5 Voltage-Divider Bias
4.6 DC Bias with Voltage Feedback
4.7 Miscellaneous Bias Configurations
4.8 Transistor Switching Networks
4.9 pnp Transistors
4.10 Bias Stabilization
4.11 Summary
Problems
Chapter 5 BJT AC Analysis
5.1 Introduction
5.2 Amplification in the AC Domain
5.3 BJT Transistor Modeling
5.4 The re Transistor Model
5.5 The Hybrid Equivalent Model
5.6 Hybrid Model
5.7 Variations of Transistor Parameters
5.8 Common-Emitter Fixed-Bias Configuration
5.9 Voltage-Divider Bias
5.10 CE Emitter-Bias Configuration
5.11 Emitter-Follower Configuration
5.12 Common-Base Configuration
5.13 Collector Feedback Configuration
5.14 Collector DC Feedback Configuration
5.15 Determining the Current Gain
5.16 Effect of RL and Rs
5.17 Two-Port Systems Approach
5.18 Summary Table
5.19 Cascaded Systems
5.20 Darlington Connection
5.21 Feedback Pair
5.22 Current Mirror Circuits
5.23 Current Source Circuits
5.24 Approximate Hybrid Equivalent Circuit
5.25 Summary
Problems
Chapter 6 Field-Effect Transistors
6.1 Introduction
6.2 Construction and Characteristics of JFETs
6.3 Transfer Characteristics
6.4 Specification Sheets JFETs
6.5 Important Relationships
6.6 Depletion-Type MOSFET
6.7 Enhancement-Type MOSFET
6.8 CMOS
6.9 Summary Table
6.10 Summary
Problems
Chapter 7 FET Biasing
7.1 Introduction
7.2 Fixed-Bias Configuration
7.3 Self-Bias Configuration
7.4 Voltage-Divider Biasing
7.5 Depletion-Type MOSFETs
7.6 Enhancement-Type MOSFETs
7.7 Summary Table
7.8 Combination Networks
7.9 p-Channel Fets
7.10 Summary
Problems
Chapter 8 FET Amplifiers
8.1 Introduction
8.2 FET Small-Signal Model
8.3 JFET Fixed-Bias Configuration
8.4 JFET Self-Bias Configuration
8.5 JFET Voltage-Divider Configuration
8.6 JFET Source-FollowerCommon-Drain Configuration
8.7 JFET Common-Gate Configuration
8.8 Depletion-Type MOSFETs
8.9 Enhancement-Type MOSFETs
8.10 E-MOSFET Drain-Feedback Configuration
8.11 E-MOSFET Voltage-Divider Configuration
8.12 Summary Table
8.13 Effect of RL and Rsig
8.14 Cascade Configuration
8.15 Summary
Problems
Chapter 9 BJT and FET Frequency Response
9.1 Introduction
9.2 General Frequency Considerations
9.3 Low-Frequency Analysis Bode Plot
9.4 Low-Frequency Response BJT Amplifier
9.5 Low-Frequency Response FET Amplifier
9.6 Miller Effect Capacitance
9.7 High-Frequency Response BJT Amplifier
9.8 High-Frequency Response FET Amplifier
9.9 Multistage Frequency Effects
9.10 Summary
Problems
Chapter 10 Operational Amplifiers
10.1 Introduction
10.2 Differential Amplifier Circuit
10.3 Differential and Common-Mode Operation
10.4 BIFET, BIMOS, and CMOS Differential Amplifier Circuits
10.5 Op-Amp Basics
10.6 Op-Amp SpecificationsDC Offset Parameters
10.7 Op-Amp SpecificationsFrequency Parameters
10.8 Op-Amp Unit Specifications
10.9 Summary
Problems
Chapter 11 Op-Amp Applications
11.1 Operation Circuits
11.2 Active Filters
11.3 Comparator Unit Operation
11.4 Schmitt Trigger
11.5 Summary
Problems
Chapter 12 Power Amplifiers
12.1 IntroductionDefinitions and Amplifier Types
12.2 Series-Fed Class A Amplifier
12.3 Transformer-Coupled Class A Amplifier
12.4 Class B Amplifier Operation
12.5 Class B Amplifier Circuits
12.6 Class C and Class D Amplifiers
12.7 Summary
Problems
Chapter 13 Feedback Circuits
13.1 Feedback Concepts
13.2 Feedback Connection Types
13.3 Practical Feedback Circuits
13.4 Feedback AmplifierPhase and Frequency Considerations
13.5 Summary
Problems
The preparation of the preface for the 11th edition resulted in a bit of reflection on the 40 years since the first edition was published in 1972 by two young educators eager to test their ability to improve on the available literature on electronic devices. Although one may prefer the term semiconductor devices rather than electronic devices, the first edition was almost exclusively a survey of vacuum-tube devicesa subject without a single section in the new Table of Contents. The change from tubes to predominantly semiconductor devices took almost five editions, but today it is simply referenced in some sections. It is interesting, however, that when field-effect transistor FET devices surfac
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